2SC4617 | PartQuest™ Explore

Test BJT Main Characteristics

Ridwan
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Design example from the Webinar: “Creating New Components, Part 1: Datasheet Model Builder”. View the archive presentation here: http://www.systemvision.com/webinarsThis circuit tests the current gain (hFE), the current gain-bandwidth product (fT), the collector-emitter saturation voltage (Vce_sat) and the Early voltage (V_Early) of the transistor under test.To create an equivalent steady-state Ic vs. Vce curve, set the voltage function generator to Pulse (0 to 5V in 5 seconds rise time), so that the Vce voltage and the time values are identical. Set the current function generator to DC, with the value of the desired base current. Then run a time domain simulation for 5 seconds, and plot the current quantity from the current monitor. This "i vs. time" plot is equivalent to the desired Ic vs. Vce curve. The large signal current gain hFE, Vce_sat and V_Early can all be verified from this plot.To verify the dynamic current gain and fT, set the voltage function generator to DC, with a constant non-zero value that is well into the active region of the device (e.g. 10V). Set the current function generator to Sine, and choose the desired current amplitude and frequency for the base current. Also check the box "Use as AC Current Source" so it will provide the AC reference signal. Run the time domain simulation long enough to show several cycles of the collector current in the current monitor, and you can compute the dynamic current gain at the specified frequency by dividing by the base current amplitude. Also, run a frequency domain sweep from a low frequency value to a high frequency, to verify the 0 dB gain crossing at the expected frequency fT.

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Test BJT Main Characteristics

RidwanDesigner172081

Ridwan

Member for

Ridwan
Designer172081